Инд. авторы:	Antonova I.V., Nebogatikova N.A., Stepina N.P., Volodin V.A., Kirienko V.V., Golyashov V.A., Tereshchenko O.E., Kokh K.A., Rybin M.G., Obrazstova E.D.
Заглавие:	Growth of bi2se3/graphene heterostructures with the room temperature high carrier mobility
Библ. ссылка:	Antonova I.V., Nebogatikova N.A., Stepina N.P., Volodin V.A., Kirienko V.V., Golyashov V.A., Tereshchenko O.E., Kokh K.A., Rybin M.G., Obrazstova E.D. Growth of bi2se3/graphene heterostructures with the room temperature high carrier mobility // Journal of Materials Science. - 2021. - Vol.56. - Iss. 15. - P.9330-9343. - ISSN 0022-2461. - EISSN 1573-4803.
Внешние системы:	DOI: 10.1007/s10853-021-05836-y; РИНЦ: 46747168;
Реферат:	eng: Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.
Издано:	2021
Физ. характеристика:	с.9330-9343
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