Инд. авторы:	Kocsis M., Zheliuk O., Makk P., Tovari E., Kun P., Tereshchenko O.E., Kokh K.A., Taniguchi T., Watanabe K., Ye J.T., Csonka S.
Заглавие:	In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr
Библ. ссылка:	Kocsis M., Zheliuk O., Makk P., Tovari E., Kun P., Tereshchenko O.E., Kokh K.A., Taniguchi T., Watanabe K., Ye J.T., Csonka S. In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr // PHYSICAL REVIEW RESEARCH. - 2021. - Vol.3. - Iss. 3. - Art.033253.
Внешние системы:	DOI: 10.1103/PhysRevResearch.3.033253; РИНЦ: 47080084; WoS: 000705660600001;
Реферат:	eng: Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
Ключевые слова:	IONIC LIQUID; GRAPHENE; FIELD; RAMAN; BI2TE3; TOPOLOGICAL SUPERCONDUCTIVITY;
Издано:	2021
Физ. характеристика:	033253
Цитирование:	1. T. Taychatanapat, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Electrically tunable transverse magnetic focusing in graphene, Nat. Phys. 9, 225 (2013) 1745-2473 10.1038/nphys2549. 2. A. L. Grushina, D.-K. Ki, and A. F. Morpurgo, A ballistic (Equation presented) junction in suspended graphene with split bottom gates, Appl. Phys. Lett. 102, 223102 (2013) APPLAB 0003-6951 10.1063/1.4807888. 3. P. Rickhaus, R. Maurand, M.-H. Liu, M. Weiss, K. Richter, and C. Schönenberger, Ballistic interferences in suspended graphene, Nat. Commun. 4, 2342 (2013) 2041-1723 10.1038/ncomms3342. 4. P. Rickhaus, M.-H. Liu, P. Makk, R. Maurand, S. Hess, S. Zihlmann, M. Weiss, K. Richter, and C. Schönenberger, Guiding of electrons in a few-mode ballistic graphene channel, Nano Lett. 15, 5819 (2015) NALEFD 1530-6984 10.1021/acs.nanolett.5b01877. 5. G. Wang, A. Chernikov, M. M. Glazov, T. F. Heinz, X. Marie, T. Amand, and B. Urbaszek, Colloquium: Excitons in atomically thin transition metal dichalcogenides, Rev. Mod. Phys. 90, 021001 (2018) RMPHAT 0034-6861 10.1103/RevModPhys.90.021001. 6. F. Dettwiler, J. Fu, S. Mack, P. J. Weigele, J. C. Egues, D. D. Awschalom, and D. M. Zumbühl, Stretchable Persistent Spin Helices in GaAs Quantum Wells, Phys. Rev. X 7, 031010 (2017) 2160-3308 10.1103/PhysRevX.7.031010. 7. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Electric-field control of ferromagnetism, Nature (London) 408, 944 (2000) NATUAS 0028-0836 10.1038/35050040. 8. S. Z. Bisri, S. Shimizu, M. Nakano, and Y. Iwasa, Endeavor of iontronics: From fundamentals to applications of ion-controlled electronics, Adv. Mater. (Weinheim) 29, 1607054 (2017) ADVMEW 0935-9648 10.1002/adma.201607054. 9. T. A. Petach, K. V. Reich, X. Zhang, K. Watanabe, T. Taniguchi, B. I. Shklovskii, and D. Goldhaber-Gordon, Disorder from the bulk ionic liquid in electric double layer transistors, ACS Nano 11, 8395 (2017) 1936-0851 10.1021/acsnano.7b03864. 10. G. Hu, G. P. Pandey, Q. Liu, R. S. Anaredy, C. Ma, M. Liu, J. Li, S. K. Shaw, and J. Wu, Self-organization of ions at the interface between graphene and ionic liquid DEME-TFSI, ACS Appl. Mater. Interfaces 9, 35437 (2017) 1944-8244 10.1021/acsami.7b10912. 11. J. M. Lu, O. Zheliuk, I. Leermakers, N. F. Q. Yuan, U. Zeitler, K. T. Law, and J. T. Ye, Evidence for two-dimensional Ising superconductivity in gated (Equation presented), Science 350, 1353 (2015) SCIEAS 0036-8075 10.1126/science.aab2277. 12. Q. Chen, J. Lu, L. Liang, O. Zheliuk, A. A. E. Yumin, and J. Ye, Continuous low-bias switching of superconductivity in a (Equation presented) transistor, Adv. Mater. (Weinheim) 30, 1800399 (2018) ADVMEW 0935-9648 10.1002/adma.201800399. 13. O. Zheliuk, J. M. Lu, Q. H. Chen, A. A. E. Yumin, S. Golightly, and J. T. Ye, Josephson coupled Ising pairing induced in suspended (Equation presented) bilayers by double-side ionic gating, Nat. Nanotechnol. 14, 1123 (2019) 1748-3387 10.1038/s41565-019-0564-1. 14. L. Liang, Q. Chen, J. Lu, W. Talsma, J. Shan, G. R. Blake, T. T. M. Palstra, and J. Ye, Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating, Sci. Adv. 4, eaar2030 (2018) 2375-2548 10.1126/sciadv.aar2030. 15. Z. Zhang, S. Qin, K. Fu, G. Yu, W. Li, X. Zhang, S. Sun, L. Song, S. Li, R. Hao, Y. Fan, Q. Sun, G. Pan, Y. Cai, and B. Zhang, Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid, Appl. Phys. Express 9, 084102 (2016) 1882-0778 10.7567/APEX.9.084102. 16. M.-R. Zhang, S.-J. Qin, H.-D. Peng, and G.-B. Pan, Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant, Mater. Lett. 182, 363 (2016) MLETDJ 0167-577X 10.1016/j.matlet.2016.07.024. 17. Y. Tokura and N. Nagaosa, Nonreciprocal responses from non-centrosymmetric quantum materials, Nat. Commun. 9, 3740 (2018) 2041-1723 10.1038/s41467-018-05759-4. 18. G. L. J. A. Rikken and E. Raupach, Observation of magneto-chiral dichroism, Nature (London) 390, 493 (1997) NATUAS 0028-0836 10.1038/37323. 19. T. Roth and G. L. J. A. Rikken, Observation of Magnetoelectric Jones Birefringence, Phys. Rev. Lett. 85, 4478 (2000) PRLTAO 0031-9007 10.1103/PhysRevLett.85.4478. 20. Y. Shimada, M. Matsubara, Y. Kaneko, J. P. He, and Y. Tokura, Magnetoelectric emission in a magnetic ferroelectric Er-doped (Ba,Sr)(Equation presented), Appl. Phys. Lett. 89, 101112 (2006) APPLAB 0003-6951 10.1063/1.2347700. 21. Y. Iguchi, S. Uemura, K. Ueno, and Y. Onose, Nonreciprocal magnon propagation in a noncentrosymmetric ferromagnet (Equation presented), Phys. Rev. B 92, 184419 (2015) PRBMDO 1098-0121 10.1103/PhysRevB.92.184419. 22. S. Seki, Y. Okamura, K. Kondou, K. Shibata, M. Kubota, R. Takagi, F. Kagawa, M. Kawasaki, G. Tatara, Y. Otani, and Y. Tokura, Magnetochiral nonreciprocity of volume spin wave propagation in chiral-lattice ferromagnets, Phys. Rev. B 93, 235131 (2016) 2469-9950 10.1103/PhysRevB.93.235131. 23. T. Ideue, K. Hamamoto, S. Koshikawa, M. Ezawa, S. Shimizu, Y. Kaneko, Y. Tokura, N. Nagaosa, and Y. Iwasa, Bulk rectification effect in a polar semiconductor, Nat. Phys. 13, 578 (2017) 1745-2473 10.1038/nphys4056. 24. Y. M. Itahashi, T. Ideue, Y. Saito, S. Shimizu, T. Ouchi, T. Nojima, and Y. Iwasa, Nonreciprocal transport in gate-induced polar superconductor (Equation presented), Sci. Adv. 6, eaay9120 (2020) 2375-2548 10.1126/sciadv.aay9120. 25. A. Shevelkov, E. Dikarev, R. Shpanchenko, and B. Popovkin, Crystal structures of bismuth tellurohalides (Equation presented) ((Equation presented) = Cl, Br, I) from x-ray powder diffraction data, J. Solid State Chem. 114, 379 (1995) JSSCBI 0022-4596 10.1006/jssc.1995.1058. 26. S. V. Eremeev, I. P. Rusinov, I. A. Nechaev, and E. V. Chulkov, Rashba split surface states in BiTeBr, New J. Phys. 15, 075015 (2013) NJOPFM 1367-2630 10.1088/1367-2630/15/7/075015. 27. S. Fiedler, T. Bathon, S. V. Eremeev, O. E. Tereshchenko, K. A. Kokh, E. V. Chulkov, P. Sessi, H. Bentmann, M. Bode, and F. Reinert, Termination-dependent surface properties in the giant-Rashba semiconductors (Equation presented) ((Equation presented) = Cl, Br, I), Phys. Rev. B 92, 235430 (2015) PRBMDO 1098-0121 10.1103/PhysRevB.92.235430. 28. L. W. Molenkamp, G. Schmidt, and G. E. W. Bauer, The Rashba Hamiltonian and electron transport, Phys. Rev. B 64, 121202 (R) (2001) PRBMDO 0163-1829 10.1103/PhysRevB.64.121202. 29. K. Ishizaka, M. S. Bahramy, H. Murakawa, M. Sakano, T. Shimojima, T. Sonobe, K. Koizumi, S. Shin, H. Miyahara, A. Kimura, K. Miyamoto, T. Okuda, H. Namatame, M. Taniguchi, R. Arita, N. Nagaosa, K. Kobayashi, Y. Murakami, R. Kumai, Y. Kaneko, Giant Rashba-type spin splitting in bulk BiTeI, Nat. Mater. 10, 521 (2011) 1476-1122 10.1038/nmat3051. 30. L. Moreschini, G. Autès, A. Crepaldi, S. Moser, J. Johannsen, K. Kim, H. Berger, P. Bugnon, A. Magrez, J. Denlinger, E. Rotenberg, A. Bostwick, O. Yazyev, and M. Grioni, Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl), J. Electron Spectrosc. Relat. Phenom. 201, 115 (2015) JESRAW 0368-2048 10.1016/j.elspec.2014.11.004. 31. M. Sakano, M. S. Bahramy, A. Katayama, T. Shimojima, H. Murakawa, Y. Kaneko, W. Malaeb, S. Shin, K. Ono, H. Kumigashira, R. Arita, N. Nagaosa, H. Y. Hwang, Y. Tokura, and K. Ishizaka, Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors, Phys. Rev. Lett. 110, 107204 (2013) PRLTAO 0031-9007 10.1103/PhysRevLett.110.107204. 32. A. A. Eremko, L. S. Brizhik, and V. M. Loktev, Spin states of Dirac equation and Rashba spin-orbit interaction, Annals of Physics, 361, 423 (2015) 10.1016/j.aop.2015.07.007. 33. H. Maaß, H. Bentmann, C. Seibel, C. Tusche, S. V. Eremeev, T. R. F. Peixoto, O. E. Tereshchenko, K. A. Kokh, E. V. Chulkov, J. Kirschner, and F. Reinert, Spin-texture inversion in the giant Rashba semiconductor BiTeI, Nat. Commun. 7, 11621 (2016) 2041-1723 10.1038/ncomms11621. 34. R. V. Gorbachev, I. Riaz, R. R. Nair, R. Jalil, L. Britnell, B. D. Belle, E. W. Hill, K. S. Novoselov, K. Watanabe, T. Taniguchi, A. K. Geim, and P. Blake, Hunting for monolayer boron nitride: Optical and Raman signatures, Small 7, 465 (2011) 1613-6810 10.1002/smll.201001628. 35. R. Nakai and N. Nagaosa, Nonreciprocal thermal and thermoelectric transport of electrons in noncentrosymmetric crystals, Phys. Rev. B 99, 115201 (2019) 2469-9950 10.1103/PhysRevB.99.115201. 36. N. Ogawa, M. S. Bahramy, Y. Kaneko, and Y. Tokura, Photocontrol of Dirac electrons in a bulk Rashba semiconductor, Phys. Rev. B 90, 125122 (2014) PRBMDO 1098-0121 10.1103/PhysRevB.90.125122. 37. J. Sólyom, Fundamentals of the Physics of Solids (Springer, Berlin, 2010). 38. B. Fülöp, Z. Tajkov, J. Peto, P. Kun, J. Koltai, L. Oroszlány, E. Tóvári, H. Murakawa, Y. Tokura, S. Bordács, L. Tapasztó, and S. Csonka, Exfoliation of single layer BiTeI flakes, 2D Mater. 5, 031013 (2018) 2053-1583 10.1088/2053-1583/aac652. 39. D. Hajra, R. Sailus, M. Blei, K. Yumigeta, Y. Shen, and S. Tongay, Epitaxial synthesis of highly oriented 2D Janus Rashba semiconductor BiTeCl and BiTeBr layers, ACS Nano 14, 15626 (2020) 1936-0851 10.1021/acsnano.0c06434. 40. Z. Kovács-Krausz, A. M. Hoque, P. Makk, B. Szentpéteri, M. Kocsis, B. Fülöp, M. V. Yakushev, T. V. Kuznetsova, O. E. Tereshchenko, K. A. Kokh, I. E. Lukács, T. Taniguchi, K. Watanabe, S. P. Dash, and S. Csonka, Electrically controlled spin injection from giant Rashba spin-orbit conductor BiTeBr, Nano Lett. 20, 4782 (2020) 10.1021/acs.nanolett.0c00458. 41. A. Manchon, J. Železný, I. M. Miron, T. Jungwirth, J. Sinova, A. Thiaville, K. Garello, and P. Gambardella, Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems, Rev. Mod. Phys. 91, 035004 (2019) RMPHAT 0034-6861 10.1103/RevModPhys.91.035004. 42. A. Ohmura, Y. Higuchi, T. Ochiai, M. Kanou, F. Ishikawa, S. Nakano, A. Nakayama, Y. Yamada, and T. Sasagawa, Pressure-induced topological phase transition in polar semiconductor BiTeBr, Phys. Rev. B 95, 125203 (2017) 2469-9950 10.1103/PhysRevB.95.125203. 43. H. Ren, F. Pientka, S. Hart, A. T. Pierce, M. Kosowsky, L. Lunczer, R. Schlereth, B. Scharf, E. M. Hankiewicz, L. W. Molenkamp, B. I. Halperin, and A. Yacoby, Topological superconductivity in a phase-controlled Josephson junction, Nature (London) 569, 93 (2019) NATUAS 0028-0836 10.1038/s41586-019-1148-9. 44. A. Fornieri, A. M. Whiticar, F. Setiawan, E. Portolés, A. C. C. Drachmann, A. Keselman, S. Gronin, C. Thomas, T. Wang, R. Kallaher, G. C. Gardner, E. Berg, M. J. Manfra, A. Stern, C. M. Marcus, and F. Nichele, Evidence of topological superconductivity in planar Josephson junctions, Nature (London) 569, 89 (2019) NATUAS 0028-0836 10.1038/s41586-019-1068-8. 45. M. C. Dartiailh, W. Mayer, J. Yuan, K. S. Wickramasinghe, A. Matos-Abiague, I. Žutić, and J. Shabani, Phase Signature of Topological Transition in Josephson junctions, Phys. Rev. Lett. 126, 036802 (2021) 10.1103/PhysRevLett.126.036802. 46. F. Pientka, A. Keselman, E. Berg, A. Yacoby, A. Stern, and B. I. Halperin, Topological Superconductivity in a Planar Josephson Junction, Phys. Rev. X 7, 021032 (2017) 2160-3308 10.1103/PhysRevX.7.021032. 47. M. Hell, M. Leijnse, and K. Flensberg, Two-Dimensional Platform for Networks of Majorana Bound States, Phys. Rev. Lett. 118, 107701 (2017) PRLTAO 0031-9007 10.1103/PhysRevLett.118.107701. 48. K. A. Kokh, B. G. Nenashev, A. E. Kokh, and G. Y. Shvedenkov, Application of a rotating heat field in Bridgman-Stockbarger crystal growth, J. Cryst. Growth 275, e2129 (2005) JCRGAE 0022-0248 10.1016/j.jcrysgro.2004.11.299. 49. U. Petasch, C. Hennig, and H. Oppermann, Investigations on the pseudobinary system (Equation presented), Z. Naturforsch., B: J. Chem. Sci. 54b, 234 (1999) ZNBSEN 0932-0776 10.1515/znb-1999-0212. 50. I. Y. Sklyadneva, R. Heid, K.-P. Bohnen, V. Chis, V. A. Volodin, K. A. Kokh, O. E. Tereshchenko, P. M. Echenique, and E. V. Chulkov, Lattice dynamics of bismuth tellurohalides, Phys. Rev. B 86, 094302 (2012) PRBMDO 1098-0121 10.1103/PhysRevB.86.094302. 51. W. Richter and C. R. Becker, A Raman and far-infrared investigation of phonons in the rhombohedral (Equation presented)-(Equation presented) compounds (Equation presented) and (Equation presented))(Equation presented) ((Equation presented)), ((Equation presented))(Equation presented) ((Equation presented)), Phys. Status Solidi B 84, 619 (1977) PSSBBD 0370-1972 10.1002/pssb.2220840226. 52. L. M. Goncalves, C. Couto, P. Alpuim, A. G. Rolo, F. Völklein, and J. H. Correia, Optimization of thermoelectric properties on (Equation presented) thin films deposited by thermal co-evaporation, Thin Solid Films 518, 2816 (2010) THSFAP 0040-6090 10.1016/j.tsf.2009.08.038. 53. K. M. F. Shahil, M. Z. Hossain, V. Goyal, and A. A. Balandin, Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of (Equation presented), and (Equation presented) materials, J. Appl. Phys. (Melville, NY) 111, 054305 (2012) JAPIAU 0021-8979 10.1063/1.3690913. 54. A. K. Geim and I. V. Grigorieva, Van der Waals heterostructures, Nature (London) 499, 419 (2013) NATUAS 0028-0836 10.1038/nature12385. 55. J. A. Sans, F. J. Manjón, A. L. J. Pereira, R. Vilaplana, O. Gomis, A. Segura, A. Muñoz, P. Rodríguez-Hernández, C. Popescu, C. Drasar, and P. Ruleova, Structural, vibrational, and electrical study of compressed BiTeBr, Phys. Rev. B 93, 024110 (2016) 10.1103/PhysRevB.93.024110. 56. A. Akrap, J. Teyssier, A. Magrez, P. Bugnon, H. Berger, A. B. Kuzmenko, and D. van der Marel, Optical properties of BiTeBr and BiTeCl, Phys. Rev. B 90, 035201 (2014) PRBMDO 1098-0121 10.1103/PhysRevB.90.035201. 57. J. E. D. Davies, Solid state vibrational spectroscopy-III[1] The infrared and Raman spectra of the bismuth(III) oxide halides, J. Inorg. Nucl. Chem. 35, 1531 (1973) JINCAO 0022-1902 10.1016/0022-1902(73)80242-8.