Инд. авторы: Isaenko L.I., Eliseev A.P., Kolker D.B., Vedenyapin V.N., Zhurkov S.A., Erushin E.Y., Kostyukova N.Y., Boiko A.A., Shur V.Y., Akhmathanov A.R., Chuvakova M.A.
Заглавие: Influence of growth temperature of KTiOAsO4 single crystals on their physicochemical parameters and formation of domain structures
Библ. ссылка: Isaenko L.I., Eliseev A.P., Kolker D.B., Vedenyapin V.N., Zhurkov S.A., Erushin E.Y., Kostyukova N.Y., Boiko A.A., Shur V.Y., Akhmathanov A.R., Chuvakova M.A. Influence of growth temperature of KTiOAsO4 single crystals on their physicochemical parameters and formation of domain structures // Quantum Electronics. - 2020. - Vol.50. - Iss. 8. - P.788-792. - ISSN 1063-7818. - EISSN 1468-4799.
Внешние системы: DOI: 10.1070/QEL17265; SCOPUS: 2-s2.0-85091751372; WoS: 000558513900016;
Реферат: eng: A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 x 80 x 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 degrees C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 degrees C are close, whereas the electrical conductivity of the low-temperature (770 degrees C) KTA part turned out to be an order of magnitude lower than that of the high-temperature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the low-temperature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in low-temperature KTA is several times higher than in the case of high-temperature KTA. The results obtained are important for optimising RDS parameters.
Ключевые слова: KTP; PERIODICALLY POLED KTIOASO4; parametric generation of light; regular domain structures; absorption spectra; potassium arsenate titanyl crystal; KTIOPO4;
Издано: 2020
Физ. характеристика: с.788-792