Инд. авторы:	Kaveev A.K., Banshchikov A.G., Terpitskiy A.N., Golyashov V.A., Tereshchenko O.E., Kokh K.A., Estyunin D.A., Shikin A.M.
Заглавие:	Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2
Библ. ссылка:	Kaveev A.K., Banshchikov A.G., Terpitskiy A.N., Golyashov V.A., Tereshchenko O.E., Kokh K.A., Estyunin D.A., Shikin A.M. Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2 // Semiconductors. - 2020. - Vol.54. - Iss. 9. - P.1051-1055. - ISSN 1063-7826. - EISSN 1090-6479.
Внешние системы:	DOI: 10.1134/S1063782620090146; SCOPUS: 2-s2.0-85090330705; WoS: 000567018500009;
Реферат:	eng: Abstract: It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe2 at a temperature of 330°C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 ± 6 meV. Temperature-dependent measurements in the range of 15–150 K show no changes in the energy-gap width. © 2020, Pleiades Publishing, Ltd.
Ключевые слова:	topological insulators; spintronics; energy gap at the Dirac point; doping;
Издано:	2020
Физ. характеристика:	с.1051-1055