Инд. авторы:	Kovács-Krausz Z., Hoque A.M., Makk P., Szentpéteri B., Kocsis M., Fülöp B., Yakushev M.V., Kuznetsova T.V., Tereshchenko O.E., Kokh K.A., Lukács I.E., Taniguchi T., Watanabe K., Dash S.P., Csonka S.
Заглавие:	Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
Библ. ссылка:	Kovács-Krausz Z., Hoque A.M., Makk P., Szentpéteri B., Kocsis M., Fülöp B., Yakushev M.V., Kuznetsova T.V., Tereshchenko O.E., Kokh K.A., Lukács I.E., Taniguchi T., Watanabe K., Dash S.P., Csonka S. Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr // Nano letters. - 2020. - Vol.20. - Iss. 7. - P.4782-4791. - ISSN 1530-6992.
Внешние системы:	DOI: 10.1021/acs.nanolett.0c00458; РИНЦ: 45456413; PubMed: 32511931; SCOPUS: 2-s2.0-85088207096; WoS: 000548893200012;
Реферат:	eng: Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.
Ключевые слова:	Rashba-Edelstein effect; polar semiconductors; graphene; all-electric spin control; 2D materials; nonlocal spin valve; Spintronics;
Издано:	2020
Физ. характеристика:	с.4782-4791
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