| Инд. авторы: | Kokh K.A., Nebogatikova N.A., Antonova I.V., Kustov D.A., Golyashov V.A., Goldyreva E.S., Stepina N.P., Kirienko V.V., Tereshchenko O.E. |
| Заглавие: | Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica |
| Библ. ссылка: | Kokh K.A., Nebogatikova N.A., Antonova I.V., Kustov D.A., Golyashov V.A., Goldyreva E.S., Stepina N.P., Kirienko V.V., Tereshchenko O.E. Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica // Materials Research Bulletin. - 2020. - Vol.129. - Art.110906. - ISSN 0025-5408. - EISSN 1873-4227. |
| Внешние системы: | DOI: 10.1016/j.materresbull.2020.110906; WoS: 000536182700029; |
| Реферат: | eng: Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 degrees C. The resistance of 20-300 nm thick films is in the range of 10(2)-10(4) Omega/sq as compared with similar to 10 Omega/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600-700 degrees C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.
|
| Ключевые слова: | SURFACE; THICKNESS; BI2TE3; QUANTUM OSCILLATIONS; TOPOLOGICAL INSULATOR; RAMAN; Electrical properties; Mica; Epitaxy; Bismuth selenide; Physical vapor deposition; Microstructure; SB2TE3; |
| Издано: | 2020 |
| Физ. характеристика: | 110906 |