Инд. авторы:	Ovsyuk N.N., Lyapin S.G.
Заглавие:	Raman spectra of Si nanocrystals under high pressure: Metallization and solid state amorphization
Библ. ссылка:	Ovsyuk N.N., Lyapin S.G. Raman spectra of Si nanocrystals under high pressure: Metallization and solid state amorphization // Applied Physics Letters. - 2020. - Vol.116. - Iss. 6. - Art.062103. - ISSN 0003-6951. - EISSN 1077-3118.
Внешние системы:	DOI: 10.1063/1.5145246; РИНЦ: 43241009; WoS: 000538718600003;
Реферат:	eng: We have observed and identified two crystalline peaks at similar to 270 cm(-1) and similar to 400 cm(-1) in nanocrystalline silicon during both compression and decompression. We attribute the first peak to the orthorhombic Imma phase (Si-XI) and the second one to the TO mode of the silicon metallic beta-Sn phase (Si-II). Also, in the process of decompression, we observed a first-order-like transition from a highly coordinated metallic crystalline beta-Sn phase to the normal tetrahedral LDA phase of the amorphous semiconductor. When the pressure is completely relieved, the powder regains its initial crystalline structure, which suggests that the amorphous phase has retained some structural features of the parent crystalline phase. Published under license by AIP Publishing.
Ключевые слова:	SILICON; PHASE-TRANSITION;
Издано:	2020
Физ. характеристика:	062103