Инд. авторы:	Grigoryev Y.N., Gorobchuk A.G.
Заглавие:	Effect of RF discharge structure on silicon etching in CF 4/O2
Библ. ссылка:	Grigoryev Y.N., Gorobchuk A.G. Effect of RF discharge structure on silicon etching in CF 4/O2 // 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings. - 2010. - Art.5490516. - ISBN 9781424472017.
Внешние системы:	DOI: 10.1109/MIEL.2010.5490516; SCOPUS: 2-s2.0-77955194583;
Реферат:	eng: The effect of RF discharge structure on silicon etching process in CF 4/O2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multi-component physical-chemical hydrodynamics describing convective-diffusion transfer and production of all mixture components. The special fixed distributions of electron density as well as results of RF discharge numerical simulation in hydrodynamic approximation were examined. The numerical evaluations of electron density influence on the main characteristics of silicon etching shown that the etching uniformity index substantially depends on the electron density variation in the radial direction. This fact is naturally neglected in the 1D-calculations of RF discharge. © 2010 IEEE.
Ключевые слова:	Electric discharges; Microelectronics; Mathematical models; Hydrodynamics; Fluid dynamics; Etching; Electrons; Electron density measurement; Computer simulation; Chemical reactors; Carrier concentration; Silicon etching; RF discharge; Radial direction; Numerical simulation; Numerical evaluations; Multicomponents; Mixture components; Main characteristics; Hydrodynamic approximation; Etching uniformity; Electron densities; Convective diffusion;
Издано:	2010
Физ. характеристика:	5490516, с.135-138
Конференция:	Название: 27th International Conference on Microelectronics, MIEL 2010 Аббревиатура: MIEL 2010 Даты проведения: 2010-05-16 - 2010-05-19