Инд. авторы: Yoshikawa T., Ishida Y., Sumida K., Chen J., Kokh K.A., Tereshchenko O.E., Shin S., Kimura A.
Заглавие: Enhanced photovoltage on the surface of topological insulator via optical aging
Библ. ссылка: Yoshikawa T., Ishida Y., Sumida K., Chen J., Kokh K.A., Tereshchenko O.E., Shin S., Kimura A. Enhanced photovoltage on the surface of topological insulator via optical aging // Applied Physics Letters. - 2018. - Vol.112. - Iss. 19. - Art.192104. - ISSN 0003-6951. - EISSN 1077-3118.
Внешние системы: DOI: 10.1063/1.5008466; РИНЦ: 35527718; SCOPUS: 2-s2.0-85046904191; WoS: 000431980100017;
Реферат: eng: The efficient generation of spin-polarized current is one of the keys to realizing spintronic devices with a low power consumption. Topological insulators are strong candidates for this purpose. A surface photovoltaic effect can be utilized on the surface of a topological insulator, where a surface spin-polarized current can flow upon illumination. Here, we used time- and angle-resolved photoelectron spectroscopy on the surface of Bi2Te3 to demonstrate that the magnitude of the surface photovoltage is almost doubled in optically aged samples, i.e., samples whose surface has been exposed to intense infrared light illumination. Our findings pave the way for optical control of the spin-polarized current by utilizing topological insulators. © 2018 Author(s).
Ключевые слова: Energy efficiency; Photoelectron spectroscopy; Photovoltaic effects; Spin polarization; Tellurium compounds; Angle resolved photoelectron spectroscopy; Enhanced photovoltage; Low-power consumption; Optical control; Electric insulators; Topological insulators; Surface photovoltages; Spintronic device; Spin polarized currents; Bismuth compounds;
Издано: 2018
Физ. характеристика: 192104
Цитирование: 1. M. Z. Hasan and C. L. Kane, "Colloquium: Topological insulators," Rev. Mod. Phys. 82, 3045 (2010). 10.1103/RevModPhys.82.3045 2. Y. Ishida, T. Otsu, T. Shimada, M. Okawa, Y. Kobayashi, F. Iga, T. Takabatake, and S. Shin, "Emergent photovoltage on SmB6 surface upon bulk-gap evolution revealed by pump-and-probe photoemission spectroscopy," Sci. Rep. 5, 8160 (2015). 10.1038/srep08160 3. M. Neupane, S.-Y. Xu, Y. Ishida, S. Jia, B. M. Fregoso, C. Liu, I. Belopolski, G. Bian, N. Alidoust, T. Durakiewicz, V. Galitski, S. Shin, R. J. Cava, and M. Z. Hasan, "Gigantic surface life-time of an intrinsic topological insulator," Phys. Rev. Lett. 115, 116801 (2015). 10.1103/PhysRevLett.115.116801 4. Y. Ishida, T. Togashi, K. Yamamoto, M. Tanaka, T. Kiss, T. Otsu, Y. Kobayashi, and S. Shin, "Time-resolved photoemission apparatus achieving sub-20-meV energy resolution and high stability," Rev. Sci. Instrum. 85, 123904 (2014). 10.1063/1.4903788 5. K. A. Kokh, S. V. Makarenko, V. A. Golyashov, O. A. Shegai, and O. E. Tereshchenko, "Melt growth of bulk Bi2Te3 crystals with a natural p-n junction," CrystEngComm 16, 581 (2014). 10.1039/C3CE42026D 6. T. Bathon, S. Achilli, P. Sessi, V. A. Golyashov, K. A. Kokh, O. E. Tereshchenko, and M. Bode, "Experimental realization of a topological p-n junction by intrinsic defect grading," Adv. Mater. 28, 2183 (2016). 10.1002/adma.201504771 7. Y. L. Chen, J. G. Analytis, J.-H. Chu, Z. K. Liu, S.-K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain, and Z.-X. Shen, "Experimental realization of a three-dimensional topological insulator, Bi2Te3," Science 325, 178 (2009). 10.1126/science.1173034 8. D. X. Qu, Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong, "Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3," Science 329, 821 (2010). 10.1126/science.1189792 9. J. Sánchez-Barriga, M. Battiato, M. Krivenkov, E. Golias, A. Varykhalov, A. Romualdi, L. V. Yashina, J. Minár, O. Kornilov, H. Ebert, K. Held, and J. Braun, "Subpicosecond spin dynamics of excited states in the topological insulator Bi2Te3," Phys. Rev. B 95, 125405 (2010) 10.1103/PhysRevB.95.125405. 10. M. Hajlaoui, E. Papalazarou, J. Mauchain, L. Perfetti, A. Taleb-Ibrahimi, F. Navarin, M. Monteverde, P. Auban-Senzier, C. R. Pasquier, N. Moisan, D. Boschetto, M. Neupane, M. Z. Hasan, T. Durakiewicz, Z. Jiang, Y. Xu, I. Miotkowski, Y. P. Chen, S. Jia, H. W. Ji, R. J. Cava, and M. Marsi, "Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry," Nat. Commun. 5, 3003 (2014). 10.1038/ncomms4003 11. D. Bröcker, T. Gießel, and W. Widdra, "Charge carrier dynamics at the SiO2/Si(1 0 0) surface: A time-resolved photoemission study with combined laser and synchrotron radiation," Chem. Phys. 299, 247 (2004). 10.1016/j.chemphys.2003.11.028 12. H. C. Casey, J. Muth, S. Krishnankutty, and J. M. Zavada, "Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes," Appl. Phys. Lett. 68, 2867 (1996). 10.1063/1.116351 13. P. Perlin, M. Osiński, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas, and P. Sartori, "Low temperature study of current and electroluminescence in InGaN/AlGaN/GaN double heterostructure blue light-emitting diodes," Appl. Phys. Lett. 69, 1680 (1996). 10.1063/1.117026 14. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, "Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes," IEEE Electron Device Lett. 23, 535 (2002). 10.1109/LED.2002.802601 15. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, "Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double heterostructure blue light-emitting diodes," Appl. Phys. Lett. 84, 1046 (2004). 10.1063/1.1647273 16. D. Korucu, H. Efeoglu, A. Turut, and S. Altindal, "Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K," Mater. Sci. Semicond. Process. 15, 480-485 (2012). 10.1016/j.mssp.2012.03.005 17. P. D. C. King, R. C. Hatch, M. Bianchi, R. Ovsyannikov, C. Lupulescu, G. Landolt, B. Slomski, J. H. Dil, D. Guan, J. L. Mi, E. D. L. Rienks, J. Fink, A. Lindblad, S. Svensson, S. Bao, G. Balakrishnan, B. B. Iversen, J. Osterwalder, W. Eberhardt, F. Baumberger, and Ph. Hofmann, "Large tunable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3," Phys. Rev. Lett. 107, 096802 (2011). 10.1103/PhysRevLett.107.096802 18. E. Frantzeskakis, S. V. Ramankutty, N. de Jong, Y. K. Huang, Y. Pan, A. Tytarenko, M. Radovic, N. C. Plumb, M. Shi, A. Varykhalov, A. de Visser, E. van Heumen, and M. S. Golden, "Trigger of the ubiquitous surface band bending in 3D topological insulators," Phys. Rev. X 7, 041041 (2017) 10.1103/PhysRevX.7.041041. 19. M. Bianchi, D. Guan, S. Bao, J. Mi, B. B. Iversen, P. D. C. King, and P. Hofman, "Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3," Nat. Commun. 1, 128 (2010). 10.1038/ncomms1131