Инд. авторы:	Khokhryakov A.F., Palyanov Y.N., Borzdov Y.M., Kozhukhov A.S., Sheglov D.V.
Заглавие:	Influence of a silicon impurity on growth of diamond crystals in the Mg-C system
Библ. ссылка:	Khokhryakov A.F., Palyanov Y.N., Borzdov Y.M., Kozhukhov A.S., Sheglov D.V. Influence of a silicon impurity on growth of diamond crystals in the Mg-C system // Diamond and Related Materials. - 2018. - Vol.87. - P.27-34. - ISSN 0925-9635. - EISSN 1879-0062.
Внешние системы:	DOI: 10.1016/j.diamond.2018.05.006; РИНЦ: 35505868; SCOPUS: 2-s2.0-85046992959; WoS: 000445294200004;
Реферат:	eng: This article reports a study of the morphology of diamond crystals grown at 7.0 GPa and 1800 °C in the Mg-C system with the addition of silicon in an amount of 0.5 wt%. Step patterns on {111} and {100} faces were studied in a wide range of magnifications using optical microscopy (DIC), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Morphological studies revealed that a reduction in the growth rate and a change in the morphological significance of the {100} and {111} faces were associated with adsorption of a mobile impurity (silicon) leading to poisoning of kinks and (or) steps. This leads to roughing of the faces and formation of macrosteps as well as 2D and 3D nucleation islands. At a silicon concentration of 1.0 wt% or more, immobile impurity particles are apparently formed on macrostep terraces, and growth inhibition occurs according to the Cabrera-Vermilyea model. © 2018 Elsevier B.V.
Ключевые слова:	Surface microscopy; Silicon concentration; Morphological study; Impurity particles; Impurity adsorption; High pressure high temperature; Growth inhibition; 2D and 3D nucleations; Synthetic diamonds; Silicon; Morphology; Magnesium compounds; High pressure effects in solids; Atomic force microscopy; Synthetic diamond; Surface microscopy; Morphology; Impurity adsorption; High pressure high temperature (HTHP); Scanning electron microscopy; Crystal impurities;
Издано:	2018
Физ. характеристика:	с.27-34
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