Инд. авторы:	Antsygin V.D., Mamrashev A.A., Nikolaev N.A., Potaturkin O.I.
Заглавие:	Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors
Библ. ссылка:	Antsygin V.D., Mamrashev A.A., Nikolaev N.A., Potaturkin O.I. Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors // IEEE Transactions on Terahertz Science and Technology. - 2015. - Vol.5. - Iss. 4. - P.673-679. - ISSN 2156-342X .
Внешние системы:	DOI: 10.1109/TTHZ.2015.2443493; SCOPUS: 2-s2.0-85027957528; WoS: 000358722600025;
Реферат:	eng: The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer eta-InAs and eta-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775- and 1550-nm pump wavelengths correspondingly.
Ключевые слова:	EMISSION; THZ-RADIATION; INDIUM ARSENIDE; LASER-IRRADIATED INAS; THz spectroscopy; terahertz (THz) generator; PULSES; optical rectification; narrow-gap semiconductor; magnetic field; InSb; InAs; photo-Dember effect; ENHANCEMENT;
Издано:	2015
Физ. характеристика:	с.673-679