Инд. авторы:	Kozhukhov A.S., Gavrilova T.A., Kokh K.A., Atuchin V.V.
Заглавие:	Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface
Библ. ссылка:	Kozhukhov A.S., Gavrilova T.A., Kokh K.A., Atuchin V.V. Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface // International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings. - 2012. - Art.6310248. - ISBN 9781467325202. - ISSN 1815-3712.
Внешние системы:	DOI: 10.1109/EDM.2012.6310248; РИНЦ: 20490021; SCOPUS: 2-s2.0-84868651467;
Реферат:	eng: Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ∼200 mm 2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM. © 2012 IEEE.
Ключевые слова:	crystal growth; Gallium selenide; SEM; AFM; cleavage; Cleaved surfaces; Gallium selenides; GaSe crystals; Local defects; Micromorphologies; Modified Bridgman method; Optical qualities; Oscillating temperatures; Crystal growth from melt; Scanning electron microscopy; Electron devices; Crystal growth; Mesostructures; cleavage; AFM;
Издано:	2012
Физ. характеристика:	6310248, с.26-28
Конференция:	Название: 2012 13th Annual International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM'2012 Даты проведения: 2012-07-02 - 2012-07-06