| Инд. авторы: | Popova V.P., Safronova L.N., Naumovaa O.V., Volodina V.A., Kupriyanov I.N., Pal'yanov Yu.N. |
| Заглавие: | Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures |
| Библ. ссылка: | Popova V.P., Safronova L.N., Naumovaa O.V., Volodina V.A., Kupriyanov I.N., Pal'yanov Yu.N. Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures // Bulletin of the Russian Academy of Sciences: Physics. - 2012. - Vol.76. - Iss. 5. - P.577-581. - ISSN 1062-8738. - EISSN 1934-9432. |
| Внешние системы: | DOI: 10.3103/S1062873812050206; РИНЦ: 20473948; SCOPUS: 2-s2.0-84863680780; |
| Реферат: | eng: (111) synthetic HPTP diamond plates are irradiated by H 2 + 50 keV ions in the range of the fluences of 1-13 × 10 16 sm -2 and annealed in vacuum at 1 mPa (VPHT, 500-1600°C) or at high HPHT parameters (4.0-7.5 GPa, 1200-1550°C). It is shown by measuring the layer conductivity and Raman light scattering that after VPHT annealing, a buried layer of glassy carbon 10-100 nm thick with low resistance (∼1 kOhm/□) is formed, followed by HPHT with high resistance (∼1 MOhm/□) and hopping transport along defects. © Allerton Press, Inc., 2012.
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| Ключевые слова: | Ion implantation; Hydrogen; Raman light scattering; Low resistance; keV ions; In-vacuum; Synthetic diamonds; Hopping transport; High resistance; High pressure; Fluences; Conductive layer; Buried layer; Hydrogen ion implantation; |
| Издано: | 2012 |
| Физ. характеристика: | с.577-581 |