Инд. авторы:	Atuchin V.V., Andreev Y.M., Kokh K.A., Lanskii G.V., Shaiduko A.V., Izaak T.I., Svetlichnyi V.A.
Заглавие:	Optimal doping of GaSe with isovalent elements
Библ. ссылка:	Atuchin V.V., Andreev Y.M., Kokh K.A., Lanskii G.V., Shaiduko A.V., Izaak T.I., Svetlichnyi V.A. Optimal doping of GaSe with isovalent elements // Proceedings of SPIE - The International Society for Optical Engineering. - 2013. - Vol.8772. - Art.87721Q. - ISSN 0277-786X.
Внешние системы:	DOI: 10.1117/12.2017059; РИНЦ: 20449335; SCOPUS: 2-s2.0-84880847064;
Реферат:	eng: The centimeter-sized GaSe crystals doped with 0.01, 0.05, 0.1, 0.2, 0.5, 1, 2 at.% of Al and 0.025, 0.1, 0.5, 1,2 at. % of Er have been grown by the modified Bridgman method with heat field rotation. The crystals have been studied in comparison with GaSe crystals doped with 0.1, 0.5, 1, 2, 3, 5, 7, 10.2 wt.% of S, 0.01, 0.1, 0.5, 1, 2, 3, 5 wt.% of In and 0.01, 0.1, 0.5, 1, 2 wt. % of Te grown by the conventional Bridgman method. The distribution coefficient of Al in the grown GaSe:Al (≥0.1 at.%) crystals has been estimated to be 8 10-3 and it is within the range of 10-2-10-3 in Er-doped crystals. For the first time, the optimal doping levels have been estimated for Al and Er in GaSe as 0.01- 0.05 at.% for Al and ∼ 0.5 wt.% for Er, respectively. © 2013 SPIE.
Ключевые слова:	GaSe; GaSe1-xSx; Optical damage threshold; Parametric frequency conversion; Distribution coefficient; GaSe; GaSe crystals; Modified Bridgman method; Ultrashort pulses; Crystal growth from melt; Optimization; Nonlinear optics; Erbium; Electromagnetic pulse; Aluminum; Parametric frequency conversion; Optimal doping; Optical damage threshold; Femtosecond pulse; GaSe1-xSx;
Издано:	2013
Конференция:	Название: Nonlinear Optics and Applications VII Даты проведения: 2013-04-15 - 2013-04-17