| Инд. авторы: | Guo J., Xie J.-J., Zhang L., Chen F., Jiang K., Alexeev S.V., Andreev Y.M., Kokh K.A., Lanskii G.V., Losev V.F., Lubenko D.M., Shaiduko A.V., Svetlichnyi V.A. |
| Заглавие: | GaSe damage threshold under IR pulse pumping |
| Библ. ссылка: | Guo J., Xie J.-J., Zhang L., Chen F., Jiang K., Alexeev S.V., Andreev Y.M., Kokh K.A., Lanskii G.V., Losev V.F., Lubenko D.M., Shaiduko A.V., Svetlichnyi V.A. GaSe damage threshold under IR pulse pumping // Proceedings of SPIE - The International Society for Optical Engineering. - 2013. - Vol.8677. - Art.86771E. - ISSN 0277-786X. |
| Внешние системы: | DOI: 10.1117/12.2008916; РИНЦ: 20430627; SCOPUS: 2-s2.0-84875882824; |
| Реферат: | eng: Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping. © 2013 SPIE. |
| Ключевые слова: | damage threshold; multiphoton absorptions; non-linear GaSe crystals; Ti:Sapphiere and CO2 lasers; Damage threshold; Field-induced effects; GaSe crystals; Carbon dioxide; Defects; Pulse pumping; Multi-photon absorption; crystal bulk; Micro-defects; |
| Издано: | 2013 |
| Физ. характеристика: | 86771E |
| Конференция: | Название: XIX International Symposium on High-Power Laser Systems and Applications 2012 Даты проведения: 2012-09-10 - 2012-09-14 |