| Инд. авторы: | AndReev Y.M., Lanskii G.V., Kokh K.A., Svetlichnyi V.A. |
| Заглавие: | Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx |
| Библ. ссылка: | AndReev Y.M., Lanskii G.V., Kokh K.A., Svetlichnyi V.A. Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx // Proceedings of SPIE - The International Society for Optical Engineering. - 2015. - Vol.9810. - Art.98101P. - ISSN 0277-786X. |
| Внешние системы: | DOI: 10.1117/12.2224703; SCOPUS: 2-s2.0-84957989895; |
| Реферат: | eng: Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5-35 μm and into 0.2-4.5 THz is realized. S-doped crystals demonstrated advantages from 50-70% in the first experiments up to 8.5-15 times in the following experiments depending on experimental conditions. © 2016 SPIE. |
| Ключевые слова: | Optical rectifications; Nonlinear crystals; GaSe1-xSx; GaSe; Fs pulse; Down conversion; Ultrashort pulses; Pulsed lasers; optical rectification; nonlinear crystal; mid-IR; GaSe1-xSx; GaSe; fs pulse; down-conversion; THz; |
| Издано: | 2015 |
| Конференция: | Название: International Conference on Atomic and Molecular Pulsed Lasers XII Даты проведения: 2015-09-13 - 2015-09-18 |