| Инд. авторы: | Popov V.P., Ilnitskii M.A., Pokhil G.P., Titov A.I, Karaseov P.A., Karabeshkin K.V., Pal'yanov Y.N., Rubanov S. |
| Заглавие: | Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond |
| Библ. ссылка: | Popov V.P., Ilnitskii M.A., Pokhil G.P., Titov A.I, Karaseov P.A., Karabeshkin K.V., Pal'yanov Y.N., Rubanov S. Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond // Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. - 2017. - Vol.406. - P.634-637. - ISSN 0168-583X. |
| Внешние системы: | DOI: 10.1016/j.nimb.2016.12.020; РИНЦ: 31028951; SCOPUS: 2-s2.0-85009433256; WoS: 000407659500044; |
| Реферат: | eng: Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1 1 1) HPHT diamond irradiated with 10–350 keV/proton H+ and H2 + ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100 keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100 keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond. © 2016 Elsevier B.V.
|
| Ключевые слова: | Diamond; Ion implantation; Monte Carlo simulation; Ions; TRIM; Sensing applications; Secondary ion mass spectroscopies (SIMS); Implantation process; Electron energy loss; Damage formation; Cross-section transmission electron microscopies; Binary collision approximations; Transmission electron microscopy; Damage formation; Quantum computers; Monte Carlo methods; Mass spectrometry; Ion implantation; Intelligent systems; High resolution transmission electron microscopy; Energy dissipation; Electron energy levels; Diamonds; Color centers; Atomic force microscopy; TRIM; Proton range; Secondary ion mass spectrometry; |
| Издано: | 2017 |
| Физ. характеристика: | с.634-637 |