Инд. авторы:	Surovtsev N.V., Kupriyanov I.N.
Заглавие:	Effect of nitrogen impurities on the Raman line width in diamond, revisited
Библ. ссылка:	Surovtsev N.V., Kupriyanov I.N. Effect of nitrogen impurities on the Raman line width in diamond, revisited // Crystals. - 2017. - Vol.7. - Iss. 8. - Art.239. - ISSN 2073-4352.
Внешние системы:	DOI: 10.3390/cryst7080239; РИНЦ: 31101994; SCOPUS: 2-s2.0-85026771499; WoS: 000408374200011;
Реферат:	eng: The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed. © 2017 by the authors.
Ключевые слова:	Raman scattering; Raman linewidth; Nitrogen defects; Diamond;
Издано:	2017
Физ. характеристика:	239