Инд. авторы:	Fiedler S., Bentmann H., Reinert F., Bathon T., Sessi P., Bode M., Eremeev S.V., Chulkov E.V., Tereshchenko O.E., Kokh K.A.
Заглавие:	Termination-dependent surface properties in the giant-rashba semiconductors bitex (x=cl, br, i)
Библ. ссылка:	Fiedler S., Bentmann H., Reinert F., Bathon T., Sessi P., Bode M., Eremeev S.V., Chulkov E.V., Tereshchenko O.E., Kokh K.A. Termination-dependent surface properties in the giant-rashba semiconductors bitex (x=cl, br, i) // Physical Review B: Condensed Matter and Materials Physics. - 2015. - Vol.92. - Iss. 23. - Art.235430. - ISSN 1098-0121. - EISSN 1550-235X.
Внешние системы:	DOI: 10.1103/PhysRevB.92.235430; РИНЦ: 26801070; SCOPUS: 2-s2.0-84950341480; WoS: 000366494000007;
Реферат:	eng: The noncentrosymmetric semiconductors BiTeX(X=Cl,Br,I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single-crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), and density functional theory calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X=Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology. © 2015 American Physical Society.
Ключевые слова:	PHASE; BI2TE3; METALS; AUGMENTED-WAVE METHOD;
Издано:	2015
Физ. характеристика:	235430