Unexpected features of the formation of si and ge nanocrystals during annealing of implanted sio<sub>2</sub> layers: low frequency raman spectroscopic characterization

Mankad V.; Gupta S.K.; Jha P.K.; Ovsyuk N.N.

doi:10.1016/j.physb.2013.09.044

Инд. авторы:	Mankad V., Gupta S.K., Jha P.K., Ovsyuk N.N.
Заглавие:	Unexpected features of the formation of si and ge nanocrystals during annealing of implanted sio₂ layers: low frequency raman spectroscopic characterization
Библ. ссылка:	Mankad V., Gupta S.K., Jha P.K., Ovsyuk N.N. Unexpected features of the formation of si and ge nanocrystals during annealing of implanted sio₂ layers: low frequency raman spectroscopic characterization // Physica B: Condensed Matter. - 2014. - Vol.432. - P.116-120. - ISSN 0921-4526.
Внешние системы:	DOI: 10.1016/j.physb.2013.09.044; РИНЦ: 21860943;
Издано:	2014
Физ. характеристика:	с.116-120