Инд. авторы:	Atuchin V.V., Borisov S.V., Gavrilova T.A., Kokh K.A., Kuratieva N.V., Pervukhina N.V.
Заглавие:	Physical vapor transport growth and morphology of Bi2Se3 microcrystals
Библ. ссылка:	Atuchin V.V., Borisov S.V., Gavrilova T.A., Kokh K.A., Kuratieva N.V., Pervukhina N.V. Physical vapor transport growth and morphology of Bi2Se3 microcrystals // PARTICUOLOGY. - 2016. - Vol.26. - P.118-122. - ISSN 1674-2001.
Внешние системы:	DOI: 10.1016/j.partic.2015.10.003; WoS: 000375502100015;
Реферат:	eng: High-quality Bi2Se3 microcrystals were grown by the physical vapor transport (PVT) method without using a foreign transport agent. The microplate crystals grown under the optimal temperature gradient are well faceted and have dimensions up to similar to 200 mu m. The growth proceeds by the layer-by-layer mechanism with the formation of flat low-growth rate facets. The phase composition of the grown crystals was identified by the X-ray single crystal structure analysis in space group R (3) over barm, a=4.1356(3), c= 28.634(5) angstrom, Z=3 (R=0.0147). The most probable twin planes in the tetradymite structure were evaluated by the pseudo translational sublattice method. (C) 2016 Chinese Society of Particuology and Institute of Process Engineering, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
Ключевые слова:	DEPOSITION; VAPORIZATION; SB2TE3; SURFACE; SINGLE-CRYSTALS; VIBRATIONAL PROPERTIES; SULFIDES; CRYSTAL-STRUCTURE; Twin; Structure; Physical vapor transport; Bi2Se3; TOPOLOGICAL INSULATORS; MECHANISM;
Издано:	2016
Физ. характеристика:	с.118-122