| Инд. авторы: | Kokh K.A., Molloy J.F., Naftaly M., Andreev Y., Svetlichnyi V.A., Lanskii G.V., Lapin I.N., Izaak T.I., Kokh A.E. |
| Заглавие: | Growth and optical properties of solid solution crystals GaSe1-xSx |
| Библ. ссылка: | Kokh K.A., Molloy J.F., Naftaly M., Andreev Y., Svetlichnyi V.A., Lanskii G.V., Lapin I.N., Izaak T.I., Kokh A.E. Growth and optical properties of solid solution crystals GaSe1-xSx // Materials Chemistry and Physics. - 2015. - Vol.154. - P.152-157. - ISSN 0254-0584. |
| Внешние системы: | DOI: 10.1016/j.matchemphys.2015.01.058; РИНЦ: 24009053; SCOPUS: 2-s2.0-84923093460; WoS: 000350075500020; |
| Реферат: | eng: GaSe1-xSx (x = 0, 0.01, 0.05, 0.13, 0.22, 0.29, 0.44) crystals were grown by modified vertical Bridgman method that provided (0001) crystal plane orientation perpendicular to growth axis. Absorption coefficient is minimal (decreased by up to 3 times) in the THz range at the optimal S-doping of 3 weight % (x = 0.13). Increased S content causes the absorption coefficient for e-wave to become frequency independent in the main part of the spectrum from 0.3 to 3 THz. A narrow line-width rigid phonon absorption peak E″(2) at 1.79 THz arises and then declines in intensity with the doping level, in parallel with a shift towards shorter wavelength. All rights reserved. © 2015 Elsevier B.V. All rights reserved.
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| Ключевые слова: | Solid solution crystals; Shorter wavelength; Phonon absorption; Narrow-line width; Modified vertical Bridgman method; Frequency independent; Electronic materials; Absorption co-efficient; Optical properties; Growth (materials); Crystal orientation; Absorption spectroscopy; C. Optical properties; B. Crystal growth; A. Electronic materials; Crystal growth from melt; |
| Издано: | 2015 |
| Физ. характеристика: | с.152-157 |