| Инд. авторы: | Kokh K.A., Andreev Yu.M., Svetlichnyi V.A., Lanskii G.V., Kokh A.E. |
| Заглавие: | Growth of GaSe and GaS single crystals |
| Библ. ссылка: | Kokh K.A., Andreev Yu.M., Svetlichnyi V.A., Lanskii G.V., Kokh A.E. Growth of GaSe and GaS single crystals // Crystal Research and Technology. - 2011. - Vol.46. - Iss. 4. - P.327-330. - ISSN 0232-1300. |
| Внешние системы: | DOI: 10.1002/crat.201100055; SCOPUS: 2-s2.0-79953280230; |
| Реферат: | eng: The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A new simple method of synthesis with single-zone heating furnace is proposed. Growth of crystals was performed by modified Bridgman method with the use of rotating heat field. Raman and optical depth spectra show high structural and optical quality of obtained crystals. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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| Ключевые слова: | Optical materials; Crystal growth from melt; Chalcogenides; synthesis of chalcogenides; SIMPLE method; Optical qualities; Optical depth spectra; Single crystals; Modified Bridgman method; Heat fields; Bridgman techniques; synthesis of chalcogenides; nonlinear optic materials; Bridgman technique; nonlinear optic materials; |
| Издано: | 2011 |
| Физ. характеристика: | с.327-330 |