Инд. авторы:	Ovsyuk N.N., Lyapin S.G.
Заглавие:	Polyamorphism in silicon nanocrystals under pressure
Библ. ссылка:	Ovsyuk N.N., Lyapin S.G. Polyamorphism in silicon nanocrystals under pressure // Bulletin of the Russian Academy of Sciences: Physics. - 2016. - Vol.80. - Iss. 11. - P.1295-1297. - ISSN 1062-8738. - EISSN 1934-9432.
Внешние системы:	DOI: 10.3103/S1062873816110241; SCOPUS: 2-s2.0-85006150309;
Реферат:	eng: Many works have been devoted to describing mechanisms of pressure-induced polyamorphism. This phenomenon is apparent in the phase transition between low- and high-density amorphous states (LDA and HDA) upon the application of pressure, resulting in substantial changes in the structure and physical properties of the amorphous state. The HDA–LDA transition in Si nanocrystals is observed when recording Raman spectra in situ during decompression at 6.68 GPa. © 2016, Allerton Press, Inc.
Ключевые слова:	Structure and physical properties; Silicon nanocrystals; Si nanocrystal; Polyamorphism; Nanocrystals; High-density amorphous; Amorphous state; Physics; nocv1;
Издано:	2016
Физ. характеристика:	с.1295-1297