Инд. авторы:	Khokhryakov A.F., Nechaev D.V., Palyanov Y.N., Kuper K.E.
Заглавие:	The dislocation structure of diamond crystals grown on seeds in the Mg-C system
Библ. ссылка:	Khokhryakov A.F., Nechaev D.V., Palyanov Y.N., Kuper K.E. The dislocation structure of diamond crystals grown on seeds in the Mg-C system // Diamond and Related Materials. - 2016. - Vol.70. - P.1-6. - ISSN 0925-9635. - EISSN 1879-0062.
Внешние системы:	DOI: 10.1016/j.diamond.2016.09.012; SCOPUS: 2-s2.0-84987875964; WoS: 000390722400001;
Реферат:	eng: The dislocation structure of diamond crystals grown in the Mg-C system at a pressure of 7 GPa and temperatures of 1800–1900 °C is studied by X-ray topography and selective etching. According to the selective etching data, diamond crystals have two types of dislocations whose outputs on the {100} faces of crystal are associated with two types of etch pits. It has been demonstrated that the etch pits with the side wall inclination angle of about 7° are formed at the outcrop points of full edge dislocations, while the etch pits with the inclination angle of about 4° are associated with 45° mixed dislocations. It has been found that the dislocation structure of diamonds grown at 1900 °C is completely determined by the seed crystals structure and the dislocation density is 105 cm− 2. The dislocation density in the diamond crystals grown at 1800 °C increases by two or three orders of magnitude due to nucleation of dislocations at the seed-overgrown layer interface and in the overgrown layer. The high dislocation density leads to the mosaic structure of crystals and misorientation of single blocks, up to 1°. Local ring clusters of edge dislocations were found to be the dominant source of growth layers on the {100} faces of diamond. © 2016 Elsevier B.V.
Ключевые слова:	Three orders of magnitude; Selective etching; Inclination angles; High pressure and high temperature; High dislocation density; Dislocation structures; Dislocation densities; Synthetic diamonds; High pressure effects in solids; Edge dislocations; Dislocations (crystals); Diamonds; Crystal structure; X-ray topography; Synthetic diamond; High pressure and high temperature; Etching; Dislocations; Etching; X-ray topography;
Издано:	2016
Физ. характеристика:	с.1-6