Инд. авторы:	Lanskii G., Kokh K., Svetlichnyi V., Andreev Y.
Заглавие:	Optical rectification in doped gase crystals
Библ. ссылка:	Lanskii G., Kokh K., Svetlichnyi V., Andreev Y. Optical rectification in doped gase crystals // Key Engineering Materials. - 2016. - Vol.683. - P.237-242. - ISSN 1013-9826.
Внешние системы:	DOI: 10.4028/www.scientific.net/KEM.683.237; РИНЦ: 26895158; SCOPUS: 2-s2.0-84959145985;
Реферат:	eng: It was demonstrated that S- And Te-doped GaSe crystals are useful and prospective for mid-IR and THz generation by optical rectification as well as phase matched mixing of spectral components of the fs pulse (down conversion). Phase matching curves for down-conversion in the S-doped and Te-doped GaSe. The sample optimally doped with sulfur (2.5 mas. %) have shown better characteristics under high pump fluencies than ZnTe material used in commercial devices.
Ключевые слова:	Optical rectification; Mid-IR source; Gallium selenide; Down-conversion; doping; THz generation;
Издано:	2016
Физ. характеристика:	с.237-242
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