Инд. авторы:	Kokh K.A., Panomarev J., Lapin I.N., Svetlichnyi V.A., Lanskii G.V., Andreev Y.M., Huang Z.M., Huang J.G., Gao Y.Q., Uralbekov B..
Заглавие:	Study of ga2s3 crystals grown from melt and pbcl2 flux
Библ. ссылка:	Kokh K.A., Panomarev J., Lapin I.N., Svetlichnyi V.A., Lanskii G.V., Andreev Y.M., Huang Z.M., Huang J.G., Gao Y.Q., Uralbekov B. Study of ga2s3 crystals grown from melt and pbcl2 flux // Materials Research Bulletin. - 2016. - Vol.84. - P.462-467. - ISSN 0025-5408. - EISSN 1873-4227.
Внешние системы:	DOI: 10.1016/j.materresbull.2016.08.046; РИНЦ: 27141316; SCOPUS: 2-s2.0-84983646639; WoS: 000384776600061;
Реферат:	eng: Monoclinic and cubic Ga2S3 crystals were obtained by Bridgman and flux methods. For the first time optical properties are measured in the bulk samples including THz range. The transparency range 0.44–25 μm is recorded. Ga2S3 crystal demonstrated 20 times higher light induced damage threshold compared to GaSe. No phonon absorption peaks are found in the THz range at wavenumbers below 100 cm−1. IR and THz optical, as well as other physical properties render Ga2S3 among the prospective materials for THz applications.
Ключевые слова:	C. X-ray diffraction; C. Raman spectroscopy; B. Phase equilibria; B. crystal growth; A. Optical materials; A. Chalcogenides; D. optical properties;
Издано:	2016
Физ. характеристика:	с.462-467
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