Инд. авторы:	Babich Y.V., Chepurov A.I., Feigelson B.N.
Заглавие:	Distribution of h1a-centers in as-grown diamonds of fe-ni-c system: ftir-mapping study
Библ. ссылка:	Babich Y.V., Chepurov A.I., Feigelson B.N. Distribution of h1a-centers in as-grown diamonds of fe-ni-c system: ftir-mapping study // Diamond and Related Materials. - 2016. - Vol.69. - P.8-12. - ISSN 0925-9635. - EISSN 1879-0062.
Внешние системы:	DOI: 10.1016/j.diamond.2016.07.001; РИНЦ: 27018430; SCOPUS: 2-s2.0-84978199977; WoS: 000385602000002;
Реферат:	eng: The distribution of main nitrogen defects and H1a-centers in HPHT synthetic diamond grown by temperature gradient method (system Fe-Ni-C) has been studied by FTIR-mapping technique. The IR-peak at 1450 cm− 1 of H1a-centers (di-nitrogen interstitials), appears only in some local areas of octahedral growth sectors where single substitutional nitrogen (C-defects) was partly aggregated into nitrogen pairs (A-defects). It was found that the disappearing of H1a-centers takes place simultaneously with the completion of C → A transformation. The observed distribution of nitrogen defects in diamonds with transition metals gives strong experimental evidence that the H1a-centers are not a by-product of nitrogen transformation, but are directly involved in the stepwise C → A nitrogen aggregation process. Prime novelty statement For HPHT diamond crystals of Fe-Ni-C system, the distribution of H1a centers, studied by FTIR-mapping for the first time, provide a strong argument for the interstitial-related mechanism of nitrogen C → A aggregation.
Ключевые слова:	synthetic diamonds; Defect characterization; Nitrogen aggregation; FTIR-mapping;
Издано:	2016
Физ. характеристика:	с.8-12
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