| Инд. авторы: | Gorobchuk A.G. |
| Заглавие: | Numerical investigation of silicon surface polymerization in CF4/H2 plasma |
| Библ. ссылка: | Gorobchuk A.G. Numerical investigation of silicon surface polymerization in CF4/H2 plasma // Ion – surface interactions. ISI – 2015. Proceedings of the XXII International Conference (Moscow, Russia, August 20 - 24, 2015) . - 2015. - Moscow: National Research Nuclear University «MEPhI». - P.230-232. - ISBN: 978-5-7262-2124-3. |
| Внешние системы: | РИНЦ: 32479384; |
| Реферат: | eng: The 2D mathematical model of plasma-chemical etching process, where the gas flow of the mixture was described by the equations of multicomponent physical-chemical hydrodynamics, was presented. The silicon etching in CF4/H2 gas mixture was studied. The chemical kinetic model contained 2 8 gas-phase reactions of dissociation and recombination processes and 6 heterogeneous reactions on the wafer, which included the products - F, F2, CF2, CF3, CF4, C2F6, H, H2, HF, CHF3, CH2F2. The concentrations of chemical components were calculated from the system of conservation equations included the mentioned gas-phase reactions. The governing equations were numerically solved by iterative finite difference splitting-up method. It is shown that the CF4/H2 system is characterized by lower fluorine concentrations and higher CF2, CF3 coverage of silicon surface compared to the CF4/O2 system. © Springer International Publishing Switzerland 2015. |
| Ключевые слова: | Governing equations; Fluorine concentrations; Conservation equations; Chemical-etching process; Chemical kinetic model; Silicon wafers; Silicon; Phase interfaces; Numerical methods; Iterative methods; Gas mixtures; Multicomponent gas-mixtures; Flow of gases; Recombination process; Mathematical models; Mathematical modeling; Multicomponent gas mixtures; Numerical methods; Plasmachemical etching technology; Chemical reactions; Etching; Gases; Fluorine; Heterogeneous reactions; |
| Издано: | 2015 |
| Физ. характеристика: | с.230-232 |
| Конференция: | Название: XXII International Conference "Ion – surface interactions" Аббревиатура: ISI-2015 Город: Moscow Страна: Russia Даты проведения: 2015-08-20 - 2015-08-24 |