Инд. авторы:	Kokh K., Lapin I., Svetlichnyi V., Galiyeva P., Bakhadur A., Andreev Y.
Заглавие:	Synthesis and bridgman growth of Ga2S3 crystals
Библ. ссылка:	Kokh K., Lapin I., Svetlichnyi V., Galiyeva P., Bakhadur A., Andreev Y. Synthesis and bridgman growth of Ga2S3 crystals // Key Engineering Materials. - 2016. - Vol.683. - P.71-76. - ISSN 1013-9826.
Внешние системы:	DOI: 10.4028/www.scientific.net/KEM.683.71; SCOPUS: 2-s2.0-84959175454;
Реферат:	eng: In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications. © Copyright 2016 Trans Tech Publications Ltd, Switzerland.
Ключевые слова:	Crystal growth; Nonlinear applications; Powder diffraction; Crystal growth from melt; Vertical Bridgman method; Monoclinic structures; Melt-solutions; Damage threshold; Chemical transport; Bridgman growth; Bridgman method; Scanning electron microscopy; Raman spectroscopy; Polymorphism; Crystal structure; Crystal growth; SEM; Raman spectroscopy; Powder diffraction; Polymorphism; III-VI semiconductors; Semiconductor growth;
Издано:	2016
Физ. характеристика:	с.71-76
Конференция:	Название: 12th International Conference on Prospects of Fundamental Sciences Development, PFSD 2015 Даты проведения: 2015-04-21 - 2015-04-24