Инд. авторы: Molloy J., Naftaly M., Andreev Y.M., Kokh K., Lanskii G.V., Svetlichnyi V.A.
Заглавие: Evolution of GaSe1-xSx phonon absorption peaks with S-doping studied by THz-TDS
Библ. ссылка: Molloy J., Naftaly M., Andreev Y.M., Kokh K., Lanskii G.V., Svetlichnyi V.A. Evolution of GaSe1-xSx phonon absorption peaks with S-doping studied by THz-TDS // IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. - 2015: Institute of Electrical and Electronics Engineers Inc. - Art.7327728. - ISBN: 9781479982721.
Внешние системы: DOI: 10.1109/IRMMW-THz.2015.7327728; SCOPUS: 2-s2.0-84969138514;
Реферат: eng: A dense set of solid solution crystals GaSe1-xSx is examined using THz-TDS. Evolution of phonon absorption peaks with the increase of S content is shown to have complex transformation, which should be considered in the design of dispersion equations for THz applications. © 2015 IEEE.
Издано: 2015
Физ. характеристика: 7327728
Конференция: Название: 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Аббревиатура: IRMMW-THz-2015
Город: Hong Kong
Страна: China
Даты проведения: 2015-08-23 - 2015-08-28
Ссылка: http://www.irmmw-thz2015.org/