Инд. авторы: Huang Z., Huang J.-G., Gao Y.-Q., Andreev Y.M., Kokh K.A., Lanskii G.V., Lapin I.N., Svetlichnyi V.A.
Заглавие: Long-wave IR source based on GaSe1-xSx
Библ. ссылка: Huang Z., Huang J.-G., Gao Y.-Q., Andreev Y.M., Kokh K.A., Lanskii G.V., Lapin I.N., Svetlichnyi V.A. Long-wave IR source based on GaSe1-xSx // IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. - 2015: Institute of Electrical and Electronics Engineers Inc. - Art.7327651. - ISBN: 9781479982721.
Внешние системы: DOI: 10.1109/IRMMW-THz.2015.7327651; SCOPUS: 2-s2.0-84969228113;
Реферат: eng: GaSe1-xSx crystals were used for long-wave mid-IR generation by KTP OPO down-conversion. Optimal composition GaSe1-xSx, shown 6 times higher efficiency than that of GaSe. Significant structure strengthening was achieved with Al-doping. © 2015 IEEE.
Издано: 2015
Физ. характеристика: 7327651
Конференция: Название: 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Аббревиатура: IRMMW-THz-2015
Город: Hong Kong
Страна: China
Даты проведения: 2015-08-23 - 2015-08-28
Ссылка: http://www.irmmw-thz2015.org/