Инд. авторы: Huang Z., Huang J.-G., Kokh K.A., Svetlichnyi V.A., Shabalina A.V., Andreev Y.M., Lanskii G.V.
Заглавие: Ga2S3: Optical properties and perspectives for THz applications
Библ. ссылка: Huang Z., Huang J.-G., Kokh K.A., Svetlichnyi V.A., Shabalina A.V., Andreev Y.M., Lanskii G.V. Ga2S3: Optical properties and perspectives for THz applications // IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. - 2015: Institute of Electrical and Electronics Engineers Inc. - Art.7327440. - ISBN: 9781479982721.
Внешние системы: DOI: 10.1109/IRMMW-THz.2015.7327440; SCOPUS: 2-s2.0-84969285254;
Реферат: eng: Optical properties of nonlinear Ga2S3 are studied to reveal possibility for THz applications. The results establish that 3-d (bulky) Ga2S3 is a strong potential competitor to a layered GaSe and its solid solutions those possess outstanding optical properties. © 2015 IEEE.
Издано: 2015
Физ. характеристика: 7327440
Конференция: Название: 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Аббревиатура: IRMMW-THz-2015
Город: Hong Kong
Страна: China
Даты проведения: 2015-08-23 - 2015-08-28
Ссылка: http://www.irmmw-thz2015.org/