Инд. авторы:	Alessi A., Agnello S., Buscarino G., Pan Y., Mashkovtsev R.I.
Заглавие:	EPR on radiation-induced defects in SiO2
Библ. ссылка:	Alessi A., Agnello S., Buscarino G., Pan Y., Mashkovtsev R.I. EPR on radiation-induced defects in SiO2 // Applications of EPR in Radiation Research. - 2014. - P.255-295. - ISBN 9783319092164; 3319092154; 9783319092157.
Внешние системы:	DOI: 10.1007/978-3-319-09216-4_7; SCOPUS: 2-s2.0-84930369292;
Реферат:	eng: Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common. © 2014 Springer International Publishing. All rights reserved.
Ключевые слова:	Silicon vacancy; Pulse ESEEM; Pulse ENDOR; Oxygen vacancy; Single-crystal and glass EPR; Impurity defects; Electronic structures; Dynamic properties; Coordinate system; Multi-frequency EPR;
Издано:	2014
Физ. характеристика:	с.255-295