Инд. авторы:	Andrianova N.N., Borisov A.M., Kazakov V.A., Mashkova E.S., Palyanov Y.N., Pitirimova E.A., Popov V.P., Rizakhanov R.N., Sigalaev S.K.
Заглавие:	Graphitization of a diamond surface upon high-dose ion bombardment
Библ. ссылка:	Andrianova N.N., Borisov A.M., Kazakov V.A., Mashkova E.S., Palyanov Y.N., Pitirimova E.A., Popov V.P., Rizakhanov R.N., Sigalaev S.K. Graphitization of a diamond surface upon high-dose ion bombardment // Bulletin of the Russian Academy of Sciences: Physics. - 2016. - Vol.80. - Iss. 2. - P.156-160. - ISSN 1062-8738. - EISSN 1934-9432.
Внешние системы:	DOI: 10.3103/S1062873816020040; РИНЦ: 27150680; SCOPUS: 2-s2.0-84962418128;
Реферат:	eng: Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials. © 2016, Allerton Press, Inc.
Ключевые слова:	Ion bombardment; Target temperature; Morphological study; High-dose ion bombardment; Graphite crystallites; Electrical resistances; Diamond lattices; Conducting surfaces; Synthetic diamonds; Graphite; Diamonds; Carbon; Diamond surfaces;
Издано:	2016
Физ. характеристика:	с.156-160
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