| Инд. авторы: | Atuchin V.V., Isaenko L.I., Kesler V.G., Lobanov S.I. |
| Заглавие: | Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides |
| Библ. ссылка: | Atuchin V.V., Isaenko L.I., Kesler V.G., Lobanov S.I. Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides // Journal of Alloys and Compounds. - 2010. - Vol.497. - Iss. 1-2. - P.244-248. - ISSN 0925-8388. - EISSN 1873-4669. |
| Внешние системы: | DOI: 10.1016/j.jallcom.2010.03.020; РИНЦ: 15324364; SCOPUS: 2-s2.0-77950957768; |
| Реферат: | eng: The electronic parameters of the lithium thiogallate LiGaS2 have been evaluated by X-ray photoelectron spectroscopy (XPS). Spectral features of all constituent element core levels and Auger lines have been considered. The Ga-S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference Δ2p(S-Ga) = BE(S 2p) - BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms. The value Δ2p(S-Ga) = 141.9 eV found for LiGaS2 is very close to that evaluated for AgGaS2. This relation is an indicator of closely coincident ionicity of Ga-S bonds in LiGaS2 and AgGaS2. © 2010 Elsevier B.V. All rights reserved.
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| Ключевые слова: | Valence electron; XPS; Binding energy; Crystal growth; Crystallization; Electronic properties; Gallium; Grain boundaries; Lithium; Materials properties; Optical materials; Optical properties; Photoelectricity; X ray photoelectron spectroscopy; Sulfur; Photons; Photoionization; Sulfur atoms; Spectral feature; Ionicities; Electronic parameters; Core-level photoelectron spectroscopy; Core levels; Complex sulfide; XPS; Optical materials; Electronic properties; Crystal growth; Thiogallate; Bonding; |
| Издано: | 2010 |
| Физ. характеристика: | с.244-248 |