Инд. авторы:	Khokhryakov A.F., Palyanov Y.N., Kupriyanov I.N., Borzdov Y.M., Sokol A.G., Härtwig J., Masiello F.
Заглавие:	Crystal growth and perfection of large octahedral synthetic diamonds
Библ. ссылка:	Khokhryakov A.F., Palyanov Y.N., Kupriyanov I.N., Borzdov Y.M., Sokol A.G., Härtwig J., Masiello F. Crystal growth and perfection of large octahedral synthetic diamonds // Journal of Crystal Growth. - 2011. - Vol.317. - Iss. 1. - P.32-38. - ISSN 0022-0248. - EISSN 1873-5002.
Внешние системы:	DOI: 10.1016/j.jcrysgro.2011.01.011; SCOPUS: 2-s2.0-79952038228;
Реферат:	eng: Octahedral diamond crystals grown by the temperature gradient method at 1550 °C using a BARS apparatus have been studied. Dislocations and planar defects in diamond crystals have been found and characterized by selective etching and X-ray diffraction topography. It is found that the diamond crystals contained not more than four bunches of extended defects. Large planar defects and narrow bunches of straight 〈1 1 1〉 dislocations extend from the seed crystal. 〈1 1 1〉 dislocations initiate stacking faults and partial dislocations in the 〈1 1 2〉 direction. These defects also give rise to 〈2 2 1〉 dislocations. Partial dislocations are dominant. Screw and then edge and mixed dislocations appear as the densities of linear and planar defects increase in the bunch. Combined cathodo- and photoluminescence topographic, X-ray topographic and selective etching studies of {1 1 1} faces showed, that single 〈1 1 1〉 dislocations are the sources of large low-elevation hillocks, which appeared during crystal growth. It is concluded that diamond crystal growth at the specified average rates of 3945 μm/h is a phenomenon involving the simultaneous participation of dislocations and two-dimensional nucleation as sources of growth steps. The studies have shown that dislocation-free regions in the octahedral diamond crystals weighing 3 carats occupy about 58 mm3, and some crystals have completely dislocation-free {1 1 1} growth sectors. © 2011 Elsevier B.V. All rights reserved.
Ключевые слова:	A1. Planar defects; Average rate; B1. Diamond; Diamond crystals; Dislocation-free; Extended defect; Growth sectors; Growth steps; Line defects; Mixed dislocation; Partial dislocations; Planar defect; Seed crystal; Selective etching; Temperature gradient method; Two-dimensional nucleation; X-ray diffraction topography; Crystal growth; Crystallization; Defects; Diamonds; Etching; Gradient methods; Screw dislocations; Single crystals; Stacking faults; Synthetic diamonds; Edge dislocations; X ray diffraction; B1. Diamond; A2. Single crystal growth; A1. Planar defects; A1. Line defects; A1. Etching; A1. Etching;
Издано:	2011
Физ. характеристика:	с.32-38