Инд. авторы:	Zhang Y.-F., Wang R., Kang Z.-H., Qu L.-L., Jiang Y., Gao J.-Y., Andreev Y.M., Lanskii G.V., Kokh K.A., Morozov A.N., Shaiduko A.V., Zuev V.V.
Заглавие:	AgGaS2- and Al-doped GaSe Crystals for IR Applications
Библ. ссылка:	Zhang Y.-F., Wang R., Kang Z.-H., Qu L.-L., Jiang Y., Gao J.-Y., Andreev Y.M., Lanskii G.V., Kokh K.A., Morozov A.N., Shaiduko A.V., Zuev V.V. AgGaS2- and Al-doped GaSe Crystals for IR Applications // Optics Communications. - 2011. - Vol.284. - Iss. 6. - P.1677-1681. - ISSN 0030-4018.
Внешние системы:	DOI: 10.1016/j.optcom.2010.11.067; SCOPUS: 2-s2.0-79651475428;
Реферат:	eng: We report a systematic study of AgGaS2- and Al-doped GaSe crystals in comparison with pure GaSe and S-doped GaSe crystals. AgGaS 2-doped GaSe (GaSe:AgGaS2) crystal was grown by Bridgman technique from the melt of GaSe:AgGaS2 (10.6 wt.%). Its real composition was identified as GaSe:S (2 wt.%). Al-doped GaSe (GaSe:Al) crystals were grown from the melt of GaSe and 0.01, 0.05, 0.1, 0.5, 1, 2 mass % of aluminium. Al content in the grown crystals is too small to be measured. The hardness of GaSe:S (2 wt.%) crystal grown from the melt of GaSe:AgGaS 2 is 25% higher than that of GaSe:S (2 wt.%) crystal grown by a conventional S-doping technique and 1.5- to 1.9-times higher than that of pure GaSe. GaSe:Al crystals are characterized by 2.5- to 3-times higher hardness than that of pure GaSe and by extremely low conductivity of ≤ 10- 7 Om- 1 cm- 1. A comparative experiment on SHG in AgGaS 2-, Al-, S-doped GaSe and pure GaSe is carried out under the pumps of 2.12-2.9 μm fs OPA and 9.2-10.8 μm ns CO2 laser. It was found that GaSe:S crystals possess the best physical properties for mid-IR applications among these doped GaSe crystals. GaSe:Al crystals have relatively low conductivity which have strong potential for THz application. © 2010 Elsevier B.V. All rights reserved.
Ключевые слова:	Pumps; Optical frequency conversion; Hardness; Doping (additives); Crystals; SHG; Nonlinear crystals; Aluminum; Frequency conversion; Doping; SHG; Nonlinear crystal; GaSe; Frequency conversion; Doping; GaSe;
Издано:	2011
Физ. характеристика:	с.1677-1681