| Инд. авторы: | Popov V.P., Safronov L.N., Naumova O.V., Nikolajev D.V., Palyanov Y.N., Kupriyanov I.N. |
| Заглавие: | Diamond - Graphite heterostructures formed by nitrogen and hydrogen implantation and annealing |
| Библ. ссылка: | Popov V.P., Safronov L.N., Naumova O.V., Nikolajev D.V., Palyanov Y.N., Kupriyanov I.N. Diamond - Graphite heterostructures formed by nitrogen and hydrogen implantation and annealing // Advanced Materials Research. - 2011. - Vol.276. - P.27-33. - ISSN 1022-6680. |
| Внешние системы: | DOI: 10.4028/www.scientific.net/AMR.276.27; SCOPUS: 2-s2.0-79960433627; |
| Реферат: | eng: Graphitic-diamond heterostructure may be very helpful not only for high frequency or power devices but also for new generation of electronic devices like single electron transistors or quantum computers operated at room temperature. The goal of our work was a formation of nanothin amorphous carbon or graphite layers with sp3 or sp2 hybridization inside the nitrogen doped synthetic monocristalline diamond by high dose hydrogen implantation. It was found that there is a 'critical' dose of 50 keV hydrogen molecular ions equal to 4x1016 cm-2 above which an irreversible drop of the sheet resistivity in implanted layer occurs after annealing above 1000 oC. The nature of this conductivity was investigated and it was shown that variable range hopping mechanism of 3D conductivity dominates in investigated temperature interval. Four times higher value for the onset of this conductivity in comparison with 'critical' dose for graphitization is explained by interaction of implantation induced defects with nitrogen atoms and surface defects. © (2011) Trans Tech Publications, Switzerland.
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| Ключевые слова: | Surface defects; Single electron transistors; Semiconductor devices; Quantum optics; Quantum computers; Nitrogen; Insulating materials; Hydrogen; Heterojunctions; Graphite; Electron devices; Electric resistance; Defects; Annealing; Amorphous carbon; Variable range hopping; Vacuum thermal annealing; Temperature intervals; Sheet Resistivity; Room temperature; Power devices; Nitrogen-doped; Nitrogen atom; Implanted layers; Implantation-induced defects; Hydrogen molecular ion; Hydrogen implantation; HPHT diamond; High frequency; High dose; Graphite layers; Electronic device; Blistering; Variable range hopping conductivity; Synthetic diamonds; Sheet resistance; Hydrogen and nitrogen implantation; HPHT diamond; Blistering; Vacuum thermal annealing; |
| Издано: | 2011 |
| Физ. характеристика: | с.27-33 |