Инд. авторы:	Tereshchenko O.E., Kokh K.A., Atuchin V.V., Romanyuk K.N., Makarenko S.V., Golyashov V.A., Kozhukhov A.S., Prosvirin I.P., Shklyaev A.A.
Заглавие:	Stability of the (0001) surface of the Bi2Se3 topological insulator
Библ. ссылка:	Tereshchenko O.E., Kokh K.A., Atuchin V.V., Romanyuk K.N., Makarenko S.V., Golyashov V.A., Kozhukhov A.S., Prosvirin I.P., Shklyaev A.A. Stability of the (0001) surface of the Bi2Se3 topological insulator // Journal of Experimental and Theoretical Physics Letters (JETP Letters). - 2011. - Vol.94. - Iss. 6. - P.465-468. - ISSN 0021-3640. - EISSN 1090-6487.
Внешние системы:	DOI: 10.1134/S0021364011180159; SCOPUS: 2-s2.0-82055206913;
Реферат:	eng: The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (~1 cm2) and rms roughness less than 0.1 nm have been prepared, and (1 × 1)-(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3. © 2011 Pleiades Publishing, Ltd.
Издано:	2011
Физ. характеристика:	с.465-468