Инд. авторы:	Ovsyuk N.N., Volodin V.A., Jha P.K.
Заглавие:	Photoluminescence and Raman scattering of silicon nanopowders
Библ. ссылка:	Ovsyuk N.N., Volodin V.A., Jha P.K. Photoluminescence and Raman scattering of silicon nanopowders // Bulletin of the Russian Academy of Sciences: Physics. - 2013. - Vol.77. - Iss. 9. - P.1087-1090. - ISSN 1062-8738. - EISSN 1934-9432.
Внешние системы:	DOI: 10.3103/S1062873813090335; SCOPUS: 2-s2.0-84885362173;
Реферат:	eng: Nanopowders obtained by evaporating silicon ingots with a powerful electron beam having an electron energy of 1.4 MeV in an Ar atmosphere are investigated. The nanopowders are studied by means of photoluminescence (PL) and Raman scattering (RS) spectroscopy. In simulating the PL spectra, the recombination energy dependences for the nanocrystals were found to be almost equal in vacuum and in silicon dioxide cores, allowing us to determine the average particle radius, which coincided with estimates obtained by analyzing the Raman spectra using an improved model of phonon localization that considers phonon dispersion in terms of quasi-momentum and direction. © 2013 Allerton Press, Inc.
Ключевые слова:	Nanostructured materials; Raman scattering; Photoluminescence; Metal castings; Silicon ingot; Recombination energy; PL spectra; Phonon localization; Phonon dispersions; Particle radii; Nano powders; Electron energies;
Издано:	2013
Физ. характеристика:	с.1087-1090