| Инд. авторы: | Atuchin V.V., Beisel N.F., Kokh K.A., Kruchinin V.N., Korolkov I.V., Pokrovsky L.D., Tsygankova A.R., Kokh A.E. |
| Заглавие: | Growth and microstructure of heterogeneous crystal GaSe:InS |
| Библ. ссылка: | Atuchin V.V., Beisel N.F., Kokh K.A., Kruchinin V.N., Korolkov I.V., Pokrovsky L.D., Tsygankova A.R., Kokh A.E. Growth and microstructure of heterogeneous crystal GaSe:InS // Crystengcomm. - 2013. - Vol.15. - Iss. 7. - P.1365-1369. - ISSN 1466-8033. |
| Внешние системы: | DOI: 10.1039/c2ce26474a; SCOPUS: 2-s2.0-84872719439; |
| Реферат: | eng: An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as y In = 0.28 at% and yS = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE). © 2013 The Royal Society of Chemistry.
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| Издано: | 2013 |
| Физ. характеристика: | с.1365-1369 |