Инд. авторы:	Guo J., Xie J.-J., Zhang L.-M., Li D.-J., Yang G.-L., Andreev Yu.M., Kokh K.A., Lanskii G.V., Shabalina A.V., Shaiduko A.V., Svetlichnyi V.A.
Заглавие:	Characterization of Bridgman grown GaSe:Al crystals
Библ. ссылка:	Guo J., Xie J.-J., Zhang L.-M., Li D.-J., Yang G.-L., Andreev Yu.M., Kokh K.A., Lanskii G.V., Shabalina A.V., Shaiduko A.V., Svetlichnyi V.A. Characterization of Bridgman grown GaSe:Al crystals // Crystengcomm. - 2013. - Vol.15. - Iss. 32. - P.6323-6328. - ISSN 1466-8033.
Внешние системы:	DOI: 10.1039/c3ce40116b; SCOPUS: 2-s2.0-84881425601;
Реферат:	eng: Centimeter-sized Al-doped nonlinear GaSe crystals were grown by the modified Bridgman method with heat field rotation. The alumina distribution coefficient in the grown crystals was estimated to be about 8 × 10 -2 for GaSe:Al (≥0.1 at%) crystals. GaSe:Al (≤0.5 at%) crystals possess optical properties suitable for non-linear applications. For the first time the increase in the ordinary refractive index of GaSe crystals with doping was demonstrated to be different to other doped GaSe crystals. © 2013 The Royal Society of Chemistry.
Издано:	2013
Физ. характеристика:	с.6323-6328