| Инд. авторы: | Tarasova A.Yu., Isaenko L.I., Kesler V.G., Pashkov V.M., Yelisseyev A.P., Denysyuk N.M., Khyzhun O.Yu. |
| Заглавие: | Electronic structure and fundamental absorption edges of KPb 2Br 5, K 0.5Rb 0.5Pb 2Br 5, and RbPb 2Br 5 single crystals |
| Библ. ссылка: | Tarasova A.Yu., Isaenko L.I., Kesler V.G., Pashkov V.M., Yelisseyev A.P., Denysyuk N.M., Khyzhun O.Yu. Electronic structure and fundamental absorption edges of KPb 2Br 5, K 0.5Rb 0.5Pb 2Br 5, and RbPb 2Br 5 single crystals // Journal of Physics and Chemistry of Solids. - 2012. - Vol.73. - Iss. 5. - P.674-682. - ISSN 0022-3697. |
| Внешние системы: | DOI: 10.1016/j.jpcs.2012.01.014; SCOPUS: 2-s2.0-84856972317; |
| Реферат: | eng: X-ray photoelectron core-level and valence-band spectra for pristine and Ar-ion irradiated (001) surfaces of KPb 2Br 5, K 0.5Rb 0.5Pb 2Br 5, and RbPb 2Br 5 single crystals grown by the Bridgman method have been measured and fundamental absorption edges of the ternary bromides have been recorded in the polarized light at 300 K and 80 K. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of (001) surfaces of K xRb 1-xPb 2Br 5 (x=0, 0.5, and 1.0) single crystals. Substitution of potassium for rubidium in K xRb 1-xPb 2Br 5 does not cause any changes of binding energy values and shapes of the XPS constituent element core-level spectra. Measurements of the fundamental absorption edges indicate that band gap energy, E g, increases by about 0.14 and 0.19 eV when temperature decreases from 300 K to 80 K in KPb 2Br 5 and RbPb 2Br 5, respectively. Furthermore, there is no dependence of the E g value for KPb 2Br 5 upon the light polarization, whilst the band gap energy value for RbPb 2Br 5 is bigger by 0.030.05 eV in the case of E||c compared to those in the cases of E||a and E||b. © 2012 Elsevier Ltd. All rights reserved.
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| Ключевые слова: | B. Crystal growth; C. Photoelectron spectroscopy; Bromine; X ray photoelectron spectroscopy; Single crystals; Photoelectron spectroscopy; Light polarization; Lead; Energy gap; Electronic structure; A. Semiconductors; Core levels; Bromine compounds; Binding energy; X-ray photoelectrons; Valence band spectra; Temperature decrease; Fundamental absorption edge; Core-level spectra; Band gap energy; D. Electronic structure; Crystal growth from melt; |
| Издано: | 2012 |
| Физ. характеристика: | с.674-682 |