Инд. авторы:	Nurmamat M., Krasovskii E.E., Kuroda K., Ye M., Miyamoto K., Nakatake M., Okuda T., Namatame H., Taniguchi M., Chulkov E.V., Kokh K.A., Tereshchenko O.E., Kimura A.
Заглавие:	Unoccupied topological surface state in Bi2Te2Se
Библ. ссылка:	Nurmamat M., Krasovskii E.E., Kuroda K., Ye M., Miyamoto K., Nakatake M., Okuda T., Namatame H., Taniguchi M., Chulkov E.V., Kokh K.A., Tereshchenko O.E., Kimura A. Unoccupied topological surface state in Bi2Te2Se // Physical Review B: Condensed Matter and Materials Physics. - 2013. - Vol.88. - Iss. 8. - Art.081301. - ISSN 1098-0121. - EISSN 1550-235X.
Внешние системы:	DOI: 10.1103/PhysRevB.88.081301; SCOPUS: 2-s2.0-84884522176; WoS: 000322796300004;
Реферат:	eng: Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi2Te2Se. A strong warping of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over a wide energy range and opens a way to designing optospintronic devices. © 2013 American Physical Society.
Издано:	2013
Физ. характеристика:	081301