Инд. авторы:	Kokh K.A., Atuchin V.V., Gavrilova T.A., Kozhukhov A., Maximovskiy E.A., Pokrovsky L.D., Tsygankova A.R., Saprykin A.I.
Заглавие:	Defects in GaSe grown by Bridgman method
Библ. ссылка:	Kokh K.A., Atuchin V.V., Gavrilova T.A., Kozhukhov A., Maximovskiy E.A., Pokrovsky L.D., Tsygankova A.R., Saprykin A.I. Defects in GaSe grown by Bridgman method // Journal of Microscopy. - 2014. - Vol.256. - Iss. 3. - P.208-212. - ISSN 0022-2720. - EISSN 1365-2818.
Внешние системы:	DOI: 10.1111/jmi.12174; РИНЦ: 24007178; SCOPUS: 2-s2.0-84911976448;
Реферат:	eng: Optical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ~0.06 nm excepting local hillock type defects. The hillock-type formations are round-shaped with a bottom diameter of ∼200 nm and a height of ∼20-35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements. Lay Description: The subject of this paper is the GaSe layered crystals used in THz optics. Being applied in optics it is very important to have the crystals with high optical quality, because any defect strongly affects the transmittance of light. In our crystal we have found the point defects mentioned in previous papers without any useful description. We tried to characterize them by all available microscopic methods. Main results may be represented as follows: these point defects do not affect the crystallographic quality of GaSe. Probably they play a role in the hardness of material. And finally their composition suggests the need of postgrowth treatment of the crystals in gallium rich atmosphere. © 2014 Royal Microscopical Society.
Ключевые слова:	SEM; RHEED; GaSe; Crystal growth; AFM;
Издано:	2014
Физ. характеристика:	с.208-212