Инд. авторы:	Yaacoub L., Schamm-Chardon S., Ovsyuk N.N., Zwick A., Groenen J.
Заглавие:	Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering
Библ. ссылка:	Yaacoub L., Schamm-Chardon S., Ovsyuk N.N., Zwick A., Groenen J. Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering // Bulletin of the Russian Academy of Sciences: Physics. - 2015. - Vol.79. - Iss. 11. - P.1397-1401. - ISSN 1062-8738. - EISSN 1934-9432.
Внешние системы:	DOI: 10.1016/j.quaint.2014.10.032; SCOPUS: 2-s2.0-84947997976; SCOPUS: 2-s2.0-84918811468;
Реферат:	eng: The high frequency acoustic phonons employed in Raman–Brillouin scattering are used to probe native oxide layers on Ge film surfaces in GeO2/Ge/InxGa1–xAs heterostructures. The thermal instability of GeO2 results in the production of GeO gas on Ge surfaces; molecules of this gas evaporate through the porous GeO2 layers. As a result, the Ge/GeO2 interface is depleted of Ge, and a sub-stoichiometric GeOx layer is formed. By comparing photoelastic modeling and experimental results, we discovered a 0.5 nm thick interfacial region between the film and the oxide, demonstrating the sensitivity of acoustic phonons to the subnanometer scale. © 2015, Allerton Press, Inc.
Ключевые слова:	Acoustic wave scattering; Thermal instabilities; Sub nanometers; Photoelastic models; Native oxide layer; Interfacial region; High frequency acoustics; Ge surfaces; Acoustic phonons; Thermodynamic stability; Phonons; Germanium; Electromagnetic wave emission; Brillouin scattering;
Издано:	2015
Физ. характеристика:	с.1397-1401