| Инд. авторы: | Kokh K.A., Makarenko S.V., Golyashov V.A., Shegai O.A., Tereshchenko O.E. |
| Заглавие: | Melt growth of bulk Bi2Te3 crystals with a natural p-n junction |
| Библ. ссылка: | Kokh K.A., Makarenko S.V., Golyashov V.A., Shegai O.A., Tereshchenko O.E. Melt growth of bulk Bi2Te3 crystals with a natural p-n junction // Crystengcomm. - 2014. - Vol.16. - Iss. 4. - P.581-584. - ISSN 1466-8033. |
| Внешние системы: | DOI: 10.1039/c3ce42026d; SCOPUS: 2-s2.0-84890839861; WoS: 000328551400011; |
| Реферат: | eng: Single crystals of Bi2Te3 were grown from Bi-Te melts using the modified Bridgman method. It was shown for the first time that solidification of 61 and 62 mol.% Te melts provides a built-in p-n junction on the cleaved plane of as grown crystals without any post growth treatment. The formation of a p-n junction along the growth crystal was explained by Te segregation. Both p-and n-parts of the ingot have shown high carrier concentrations n approximate to p approximate to 1 x 10(19) cm(-3) and high carrier mobility similar to 10(4) cm(2) V s(-1) at 4 K. In the transition p-n region, Hall carrier concentration is decreased by two orders of magnitude as a result of intrinsic compensation of carriers.
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| Ключевые слова: | CONDUCTIVITY TYPE; TOPOLOGICAL INSULATOR; ROTATING HEAT FIELD; THERMAL-PROPERTIES; SINGLE-CRYSTALS; |
| Издано: | 2014 |
| Физ. характеристика: | с.581-584 |