Инд. авторы:	Palyanov Y.N., Kupriyanov I.N., Borzdov Y.M., Bataleva Y.V.
Заглавие:	High-pressure synthesis and characterization of diamond from an Mg-Si-C system
Библ. ссылка:	Palyanov Y.N., Kupriyanov I.N., Borzdov Y.M., Bataleva Y.V. High-pressure synthesis and characterization of diamond from an Mg-Si-C system // Crystengcomm. - 2015. - Vol.17. - Iss. 38. - P.7323-7331. - ISSN 1466-8033.
Внешние системы:	DOI: 10.1039/c5ce01265a; РИНЦ: 24950474; SCOPUS: 2-s2.0-84942134048; WoS: 000361748900012;
Реферат:	eng: Diamond crystallization in the Mg-Si-C system has been studied at high-pressure high-temperature conditions of 7 GPa and 1500-1900 degrees C. The features of nucleation and growth of diamond from the carbon solution in the Mg-Si melt are established. The degree of the graphite-to-diamond transformation is found to depend significantly on the crystallization temperature. As opposed to the pure Mg-C system where the cubic morphology dominates, the octahedron with the antiskeletal structure of faces is the dominant form of growth in the Mg-Si-C system over the entire temperature range. The possibility of epitaxial growth of silicon carbide tetrahedral crystals on diamond upon their co-crystallization was noted. Synthesized diamonds are found to contain optically active silicon-vacancy (Si-V) centers and inactive substitutional silicon defects, giving rise to the 1.68 eV system in the photoluminescence spectra and an absorption peak at 1338 cm(-1) in the infrared absorption spectra, respectively.
Ключевые слова:	CRYSTALLIZATION; PHOTOLUMINESCENCE; CVD; CENTERS; IMPURITY; CARBON SYSTEM; SINGLE-CRYSTALS; HIGH-TEMPERATURE; DOPED DIAMOND; GROWTH;
Издано:	2015
Физ. характеристика:	с.7323-7331