Инд. авторы:	Palyanov Y.N., Borzdov Y.M., Kupriyanov I.N., Bataleva Y.V., Khohkhryakov A.F.
Заглавие:	Diamond crystallization from a tin-carbon system at HPHT conditions
Библ. ссылка:	Palyanov Y.N., Borzdov Y.M., Kupriyanov I.N., Bataleva Y.V., Khohkhryakov A.F. Diamond crystallization from a tin-carbon system at HPHT conditions // Diamond and Related Materials. - 2015. - Vol.58. - P.40-45. - ISSN 0925-9635. - EISSN 1879-0062.
Внешние системы:	DOI: 10.1016/j.diamond.2015.06.003; SCOPUS: 2-s2.0-84931265933; WoS: 000362137100008;
Реферат:	eng: Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 degrees C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 degrees C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm. (C) 2015 Elsevier B.V. All rights reserved.
Ключевые слова:	SULFUR; CATALYSTS; PHOSPHORUS; LUMINESCENCE; GROWTH; GRAPHITE; DECAY TIME; MELT; HIGH-TEMPERATURE CONDITIONS; Nitrogen impurities; Defect characterization; Solvent-catalysts; High pressure high temperature; Synthetic diamond; HIGH-PRESSURE;
Издано:	2015
Физ. характеристика:	с.40-45